Post-doctoral position in Semiconductor Power Electronics - Hiring in process/Finished, not possible to apply

Subject description
Power semiconductor devices are crucial critical elements for the world’s energy infrastructure. Development of novel device geometries and high performance materials will facilitate a transition to carbon-free energy production and electric mobility. The postdoc position will focus process development, fabrication, and characterization of high performance vertical GaN-based FinFETs optimized for power electronic applications. Based on available very high quality GaN epitaxial grown layers, we will develop integrated vertical FinFETs, aiming at high breakdown voltages and very low on-resistance values. Device measurements, both DC and high frequency will also be performed. The work will be carried out in an environment with leading experts on GaN materials growth, as well as with a very strong environment for vertical device integration and processing. Interactions with power electronics industry will also be available within the project environment. 

Work duties
The main duties involved in a post-doctoral position is to conduct research. Teaching may also be included, but up to no more than 20 % of working hours. The position shall include the opportunity for three weeks of training in higher education teaching and learning. The main work duties are listed below:

• Design and development of vertical GaN clean room processing.
• Design and fabrication of vertical GaN FinFETs.
• Electrical device characterization and analysis, at both DC and RF frequencies.
• Supervision of degree projects and doctoral students.
• Actively seek external research funding.
• Collaboration with industry and wider society.

Qualification requirements
Appointment to a post-doctoral position requires that the applicant has a PhD, or an international degree deemed equivalent to a PhD, within the subject of the position, completed no more than three years before the last date for applications. Under special circumstances, the doctoral degree can have been completed earlier.

Additional requirements:

• Very good oral and written proficiency in English.
• Experience with III-N or III-V clean room processing.
• Experience with electrical device measurements.
• Knowledge of semiconductor device physics, especially regarding wide bandgap devices.
• Device modeling experience, materials growth or analysis is also of merit.

Assessment criteria and other qualifications
This is a career development position primarily focused on research. The position is intended as an initial step in a career, and the assessment of the applicants will primarily be based on their research qualifications and potential as researchers. Particular emphasis will be placed on research skills within the subject.

For appointments to a post-doctoral position, the following shall form the assessment criteria:

• A good ability to develop and conduct high quality research.
• Teaching skills and experience.

Additional assessment criteria:

• Leadership abilities and experiences.

Consideration will also be given to good collaborative skills, drive and independence, and how the applicant’s experience and skills complement and strengthen ongoing research within the department, and how they stand to contribute to its future development.

Terms of employment
This is a full-time, fixed-term employment of 2 years. The period of employment is determined in accordance with the agreement “Avtal om tidsbegränsad anställning som postdoktor” (“Agreement on fixed-term employment as a post-doctoral fellow”) between Lund University, SACO-S, OFR/S and SEKO, dated 4 September 2008.

Instructions on how to apply
Applications shall be written in English. Please draw up the application in accordance with LTH’s Academic qualifications portfolio – see link below. Upload the application as PDF-files in the recruitment system. Read more: To apply for academic positions at LTH