Lund University, Faculty of Engineering, LTH, Department of Physics

Lund University was founded in 1666 and is repeatedly ranked among the world’s top universities. The University has around 47 000 students and more than 8 800 staff based in Lund, Helsingborg and Malmö. We are united in our efforts to understand, explain and improve our world and the human condition.

Lund University welcomes applicants with diverse backgrounds and experiences. We regard gender equality and diversity as a strength and an asset.

Description of the workplace

The research at the division of Solid State Physics within the Physics Department is focused around different aspects of semiconductor physics, ranging from materials science to quantum physics, to different applications. The division also leads NanoLund, the major interdisciplinary research environment within nanoscience and nanotechnology at Lund University. Lund Nano Lab is a central key facility for fabrication of material and devices on the nanoscale. The division is also heavily involved in the undergraduate education, especially within the “Engineering Nanoscience” program.

We offer

Lund University is a public authority which means that employees get particular benefits, generous annual leave and an advantageous occupational pension scheme. 
Read more on the University website about being a Lund University employee Work at Lund University.

Subject description

Growth of thick low-defect density Gallium Nitride on Si substrates and characterization of defects.

Work duties

The main duties involved in a post-doctoral position is to conduct research. Teaching may also be included, but up to no more than 20% of working hours. The position includes the opportunity for three weeks of training in higher education teaching and learning. The purpose of the position is to develop the independence as a researcher and to create the opportunity of further development.

The specific project focuses on the development of novel scalable and adaptive GaN and AlGaN material technology for power electronic applications. The main work involves homoepitaxy on nanowire Ga(Al)N templates on Si substrates using the state-of-the-art MOCVD at ProNano. The Post Doc project will also involve characterization of defects and free charge carrier properties.

Your work will be carried out at NanoLund within the framework of ECSEL EU project Yes-v-GaN, Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost in close collaboration with European industrial partners. The applicant must therefore be willing to engage in and collaborate with our industrial partners, and to contribute to the implementation and demonstration of the research.

Qualification requirements

Appointment to a post-doctoral position requires that the applicant has a PhD, or an international degree deemed equivalent to a PhD, within the subject of the position. The certificate proving the qualification requirement is met, must be received before the employment decision is made. Priority will be given to candidates who have graduated no more than three years ago before the last day for application. Under special circumstances, the doctoral degree can have been completed earlier.

Additional requirements:

  • Very good oral and written proficiency in English. 
  • The subject of the doctorate degree should be physics, materials science or equivalent with focus on III-Nitrides.

Assessment criteria

This is a career development position primarily focused on research. The position is intended as an initial step in a career, and the assessment of the applicants will primarily be based on their research qualifications and potential as researchers. Particular emphasis will be placed on research skills within the subject.

For appointments to a post-doctoral position, the following shall form the assessment criteria:

  • A good ability to develop and conduct high quality research.
  • Teaching skills.

Other qualifications:

  • Experience with MOCVD growth
  • Experience in characterization of defects in epitaxial III nitrides.
  • Experience of electrical and structural characterization of GaN and related materials 
  • Knowledge of semiconductor physics
  • Proven record of writing scientific articles.
  • Knowledge of semiconductor electronic devices 
  • Leadership abilities and experiences

Consideration will also be given to how the applicant’s experience and skills complement and strengthen ongoing research within the department, and how they stand to contribute to its future development.

Further information

This is a full-time, fixed-term employment of 2 years. The period of employment is determined in accordance with the agreement “Avtal om tidsbegränsad anställning som postdoktor” (“Agreement on fixed-term employment as a post-doctoral fellow”).

How to apply

Applications shall be written in English and include a cover letter stating the reasons why you are interested in the position and in what way the research project corresponds to your interests and educational background. The application must also contain a CV, degree certificate or equivalent, and other documents you wish to be considered (grade transcripts, contact information for your references, letters of recommendation, etc.). Applicants are also required to answer the job specific questions in the final step of the application process.

Welcome with your application!

Type of employment Temporary position
Contract type Full time
First day of employment As soon as possible or according to agreement
Salary Monthly salary
Number of positions 1
Full-time equivalent 100 %
City Lund
County Skåne län
Country Sweden
Reference number PA2022/2240
Contact
  • Vanya Darakchieva, 046-2220000
Union representative
  • SACO:Saco-s-rådet vid Lunds universitet, 046-2229364
  • OFR/ST:Fackförbundet ST:s kansli, 046-2229362
Published 30.Jun.2022
Last application date 14.Jul.2022 11:59 PM CEST

Return to job vacancies