Faculty of Engineering, LTH, Elektro- och informationsteknik

Lund University was founded in 1666 and is repeatedly ranked among the world’s top 100 universities. The University has 40 000 students and more than 8 000 staff based in Lund, Helsingborg and Malmö. We are united in our efforts to understand, explain and improve our world and the human condition.

LTH forms the Faculty of Engineering at Lund University, with approximately 9 000 students. The research carried out at LTH is of a high international standard and we are continuously developing our teaching methods and adapting our courses to current needs.

Subject description
III-V semiconductors are highly interesting for a range of applications in electronics and optoelectronics. In particular, III-V MOSFETs have demonstrated excellent device performance during the last few years, and they are the most promising device candidates for active THz functionality. III-V materials are also highly suitable as light-emitting devices and for solid-state quantum computation devices. Scaling of the transistor operation voltage below 0.5 V would lead to huge energy savings but requires new device concepts such as tunnelling FETs or negative capacitance FETs. The Nanoelectronics Group at Lund University has been studying high-frequency III-V MOSFETs and tunnel FETs for over 10 years and our devices hold multiple world records in terms of device performance. We currently direct an EU-funded consortium in the area of integrated III-V MOSFET technology and applications and are now broadening our research into new device and circuit concepts.

Work duties
The main duties of doctoral students are to devote themselves to their research studies which includes participating in research projects and third cycle courses. The work duties will also include teaching and other departmental duties (no more than 20%).

The topic of the PhD position is “Synthesis and integration of ferroelectric hafnia films with nanoscale devices”. The PhD position aims at investigating methods to synthesize high-quality ferroelectric hafnia films, perform detailed advanced characterization, as well as developing processes for realizing integration of the materials with III-V nanoscale transistor devices. The target application is ultra-low power negative capacitance FET devices operating at 0.1-0.3 V. The research work will require close collaboration with other PhD students in the same group as well as researchers at the synchrotron facility MAX IV.

The research will primarily involve varied forms of semiconductor processing and characterization, as well as device fabrication and measurements. The position may involve a combination of experimental and theoretical work.

Admission requirements
A person meets the general admission requirements for third-cycle courses and study programmes if he or she:

  • has been awarded a second-cycle qualification, or
  • has satisfied the requirements for courses comprising at least 240 credits of which at least 60 credits were awarded in the second cycle, or
  • has acquired substantially equivalent knowledge in some other way in Sweden or abroad.

A person meets the specific admission requirements for third cycle studies in Electrical Engineering if he or she has:

  • at least 60 second-cycle credits in subjects of relevance to electrical engineering, or
  • a MSc in Engineering in biomedical engineering, computer science, electrical engineering, engineering mathematics, engineering nanotechnology, engineering physics (MSc in Physics is also valid) or information and communication engineering.

Additional requirements:

  • Very good oral and written proficiency in English.

Assessment criteria
Selection for third-cycle studies is based on the student’s potential to profit from such studies. The assessment of potential is made primarily on the basis of academic results from the first and second cycle. Special attention is paid to the following:

1. Knowledge and skills relevant to the thesis project and the subject of study.
2. An assessment of ability to work independently and to formulate and tackle research problems.
3. Written and oral communication skills
4. Other experience relevant to the third-cycle studies, e.g. professional experience.

Other assessment criteria:
Courses, and demonstrated knowledge in material science, device physics, quantum mechanics and basic circuit design are of strong merit. Knowledge from experimental research, e.g. clean room work and device characterization is of further merit.

Consideration will also be given to good collaborative skills, drive and independence, and how the applicant, through his or her experience and skills, is deemed to have the abilities necessary for successfully completing the third cycle programme.

Terms of employment
Only those admitted to third cycle studies may be appointed to a doctoral studentship. Third cycle studies at LTH consist of full-time studies for 4 years. A doctoral studentship is a fixed-term employment of a maximum of 5 years (including 20% departmental duties). Doctoral studentships are regulated in the Higher Education Ordinance (1993:100), chapter 5, 1-7 §§.

Instructions on how to apply
Applications shall be written in English and be sent in through our online recruitment system. The application shall include a cover letter stating the reasons why you are interested in the position and in what way the research project corresponds to your interests and educational background. The application must also contain a CV, degree certificate or equivalent, and other documents you wish to be considered (grade transcripts, contact information for your references, letters of recommendation, etc.).

Type of employment Temporary position longer than 6 months
First day of employment As soon as possible
Salary Monthly salary
Number of positions 1
Working hours 100 %
City Lund
County Skåne län
Country Sweden
Reference number PA2018/4196
  • Mattias Borg, biträdande lektor, +46462229099
Published 11.Dec.2018
Last application date 20.Jan.2019 11:59 PM CET

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