Post-doctoral position in Ultrawide bandgap semiconductor materials - Hiring in process/Finished, not possible to apply

Solid State Physics

The potdoctoral position is associated with the division of Solid State Physics within the Physics Department, where extensive research is focused around different aspects of semiconductor physics, ranging from materials science to quantum physics, to different applications. The division also leads NanoLund, the major interdisciplinary research environment within nanoscience and nanotechnology at Lund University. Lund Nano Lab is a central key facility for fabrication of material and devices on the nanoscale. The division is also heavily involved in the undergraduate education, especially within the “Engineering Nanoscience” program at LTH.

Research Area

For the last twenty years our research in fabrication and advanced characterization of wide bandgap semiconductors has been in the international forefront. Most notably, we are currently directing the competence center for III-Nitride where we develop next generation high frequency and power electronics together with leading Swedish industrial partners. We wish to expand our research in the area by exploring novel nano-structuring concepts for growth of thick low-defect density Gallium Nitride on Si substrates for vertical power devices. This activity is an integral part of EU ECSEL project YESvGaN, which targets a new low-cost wide band gap power transistor technology for enabling high-efficiency power electronic systems in the field of electromobility, industrial drives, renewable energy and data centers. Our role in the project is to material growth employing unique nanowire technology and advanced transport properties characterization.

More information can be found at: https://c3nit.se/, https://liu.se/en/research/semiconductor-device-materials, www.ftf.lth.se, www.nano.lu.se

Work duties

The main duties involved in a post-doctoral posistion is to conduct research. Teaching may also be included, but up to no more than 20% of working hours. The position shall include the opportunity for three weeks of training in higher education teaching and learning. The Post Doc is also expected to interact with the Masters and PhD students in the research group and to participate in meetings and seminars.

The specific project focuses on the development of novel scalable and adaptive GaN and AlGaN material technology for power electronic applications. The main work involves homoepitaxy on nanowire Ga(Al)N templates on Si substrates using the state-of-the-art MOCVD at ProNano. The templates are made by industrial partner Hexagem using a coalescing nanowire technique resulting in very high quality GaN. The goal is to push the boundaries of current state-of-the-art in material quality by using the distinctive features of nanostructuring and develop thick low-defect density GaN and AlGaN drift layers on Si substrates. The Post Doc project will also involve characterization of free charge carrier properties using advanced terahertz ellipsometry techniques.

The Post Doc work will be carried out at NanoLund within the framework of ECSEL EU project Yes-v-GaN, Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost in close collaboration with European industrial partners along the complete value chain from materials to components. The applicant must therefore be willing to engage in and collaborate with our industrial partners, and to contribute to the implementation and demonstration of the research. The Post Doc researcher will be given the opportunity to participate in project leadership within Yes-v-GaN and upon successful completion of the Post Doc work a further carrier development may be sought for.

Qualification requirements

Appointment to a post-doctoral position requires that the applicant has a PhD, or an international degree deemed equivalent to a PhD, within the subject of the position, completed no more than three years before the last date for applications. Under special circumstances, the doctoral degree can have been completed earlier.

Additional requirements:

• Very good oral and written proficiency in English.
• The subject of the doctorate degree should be physics, materials science or equivalent with focus on MOCVD growth of III-Nitrides.
• Proficiency in MOCVD growth of III nitrides.

Assessment criteria and other qualifications

This is a career development position primarily focused on research. The position is intended as an initial step in a career, and the assessment of the applicants will primarily be based on their research qualifications and potential as researchers.

Particular emphasis will be placed on research skills within the subject.

For appointments to a post-doctoral position, the following shall form the assessment criteria:

• A good ability to develop and conduct high quality research.
• Teaching skills.

Additional assessment criteria:

• Experience with homoepitaxial growth
• Experience of electrical and structural characterization of GaN and related materials
• Knowledge of semiconductor physics
• Proven record of writing scientific articles.
• Knowledge of semiconductor electronic devices
• Leadership abilities and experiences

Consideration will also be given to good collaborative skills, drive and independence, and how the applicant’s experience and skills complement and strengthen ongoing research within the department, and how they stand to contribute to its future development.

Terms of employment

This is a full-time, fixed-term employment of 2 years. The period of employment is determined in accordance with the agreement “Avtal om tidsbegränsad anställning som postdoktor” (“Agreement on fixed-term employment as a post-doctoral fellow”) between Lund University, SACO-S, OFR/S and SEKO, dated 4 September 2008.

Instructions on how to apply

Applications shall be written in English and be compiled into a PDF-file containing:

• CV and list of publications.
• A general description of past experience in research and development, in particular in areas close to the subject area.
• Contact information of at least two references,
• Copy of degree certificates and other certificates/grades that you wish to be considered.

Applicants are also required to answer the job specific questions in the final step of the application process.